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Demand for solar silicon continues to rise!

Silicon in extremely pure form and with perfect structure is becoming more and more important for the photovoltaic industry. Silicon crystals are produced by melting highly purely silicon material. This process requires highly sophisticated crystal growing furnace using the Czochralski, or CZ, method, in which the highly pure Si is melted, and a seed crystal is dipped into the molten material and made to grow. The crystal increases in size as the seed is slowly raised from the melt. Thus, the crystal growing furnace is often called a "crystal puller.”

 

 

 

   

KX100PV Silicon Grower | top

PX100PV Performance  

Typical Ingot Diameter

150-200 mm (6-8")

Pull Chamber Height

2240 mm (88”)

Throat Diameter

305 mm (12”)

Seed Lift Rate

0-508 mm/hr

Seed Jog Speed (Nominal)

508 mm/min

Total Crucible Travel

380 mm (15")

Crucible Lift Rate

0-254 mm/hr

Crucible Jog Speed (Nominal)

50.8 mm/min

Seed Rotation (Reversible)

0-50 rpm

Crucible Rotatio (Reversible)

0-20 rpm

Vacuum Pumps Main

5660 l/min (200 cfm)

(Min. recommended) Aux

990 l/min (35 cfm)

 

 

   
   

Shape Solar Grade Ingots - Squarer | top

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Wafer Production - Wire Sawing Machines | top

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Slurry Recovery Unit (SRU) | top

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Pre-cleaning / Wafer Seperation & Transfer | top

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